| 型号 | BO6N137 | BO6N137S | BO6N135 | BO6N135S | BO6N136 | BO6N136S | 单位 |
| 特性 | DC input, 10MBd, Logic Gate output | DC input，1MBd | DC input，1MBd | / | |||
| 封装 | DIP8 | SMD8 | DIP8 | SMD8 | DIP8 | SMD8 | / |
| 电源电压Vcc | 3.3/5 | 3.3/5 | / | / | / | / | V |
| 正向电压VF | ≤1.7 | ≤1.7 | ≤1.7 | ≤1.7 | ≤1.7 | ≤1.7 | V |
| 输出低电平VOL | ≤0.6 | ≤0.6 | ≤0.4 | ≤0.4 | ≤0.4 | ≤0.4 | V |
| 高电平输出电流IOH | ≤100 | ≤100 | ≤0.5 | ≤0.5 | 1 | 1 | μA |
| 高电平电源电流ICCH | ≤10 | ≤10 | ≤1 | ≤1 | ≤1 | ≤1 | μA |
| 低电平电源电流ICCL | ≤13 | ≤13 | ≤0.4 | ≤0.4 | ≤0.4 | ≤0.4 | mA |
| 电流转换比CTR | / | / | 7-50 | 7-50 | 19-50 | 19-50 | % |
| 低电平到高电平延时TPLH | ≤90 | ≤90 | ≤1.5 | ≤1.5 | ≤0.8 | ≤0.8 | ns |
| 高电平到低电平延时TPHL | ≤75 | ≤75 | ≤1.5 | ≤1.5 | ≤0.8 | ≤0.8 | ns |
| 脉宽|TPLH-TPHL| | ≤35 | ≤35 | / | / | / | / | ns |
| 逻辑共模瞬态抑制比|CMH|、|CML| | ≥10 | ≥10 | ≥1 | ≥1 | ≥1 | ≥1 | kV/μs |
| 隔离电压VISO | ≥5000 | ≥5000 | ≥5000 | ≥5000 | ≥5000 | 5000 | Vrms |
| 环境适用性(Environment, Power and Physical) | |||||||
| 工作温度Operating Temperature | -40 ~ 85 | ℃ | |||||
| 存储温度Max storage (survival) Temperature | -55 ~ 125 | ℃ | |||||